Atomic Layer Deposition
ALD
Atomic Layer Deposition (ALD) is used to deposit very thin conformal layers on top of substrates. It can be used e.g. for growth of passivation film(s) to protect materials and devices, and to decrease leakage current.
For more information, contact Pekka Laukkanen.
Specifications:
- Suitable samples: solid plates (6 mm x 12 mm) and material which can be attached on the plate
- Film options: Al2O3 and HfO2 (typically 5-20 nm thick)
- Growth temperature below 300oC
For more information, contact Pekka Laukkanen.